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Electrical properties and transport mechanisms in Ge-Sb-Te thin films for nanoelectronicsстатья
Информация о цитировании статьи получена из
Scopus,
Web of Science
Дата последнего поиска статьи во внешних источниках: 17 октября 2017 г.
- Авторы: Sherchenkov A., Lazarenko P., Babich A., Korobova N., Timoshenkov S., Yakubov A., Terekhov D., Shuliatyev A., Kozyukhin S., Boytsova O.
- Журнал: IEEE-NANO 2015 - 15th International Conference on Nanotechnology
- Номер: 7388756
- Год издания: 2015
- Первая страница: 885
- Последняя страница: 888
- DOI: 10.1109/NANO.2015.7388756
- Аннотация: Electrical, thermal properties, and transport mechanisms in Ge2Sb2Te5 (GST225) thin films were investigated. Crystallization temperature for thin films was estimated. It was established that investigated thin films have p-type conductivity. Temperature dependencies of the resistivity for investigated thin films were studied. Two-channel model of charge carrier transport was used for the modeling of the temperature dependencies of conductivities. Activation energies of conductivity, position of the trap level controlling transport mechanism, and the density of states for this level were estimated.
- Добавил в систему: Бойцова Ольга Владимировна