Pyrosol-deposited Ga-doped ZnO (GZO) transparent electrodes in GZO/(p+nn+)c-Si solar cellsстатья

Информация о цитировании статьи получена из Scopus, Web of Science
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Дата последнего поиска статьи во внешних источниках: 5 мая 2015 г.

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[1] Pyrosol-deposited ga-doped zno (gzo) transparent electrodes in gzo/(p+nn+)c-si solar cells / U. Gennady, K. Tatiana, C. Alla et al. // Vacuum. — 2015. — Vol. 114. — P. 188–197. Transparent and conductive Ga-doped ZnO (GZO) thin films were deposited by ultrasonic spray pyrolysis of film-forming solutions (FFS) on silicon and glass. The effect of Ga concentration in the FFS in the range Ga/Zn = 0-15 at% was systematically investigated to obtain GZO films suitable for application in c-Si solar cells. Films of ∼400 nm in thickness deposited under optimized conditions(Ga/Zn = 5-6 at%) exhibited resistivity ρ of 2.0-2.5 mΩ cm (annealed), 3.0-3.7 mΩ cm (aged), an effective absorption Aeff of 4.3-5.6% in the wavelength range 300-1100 nm, the increased passivation quality and the pronounced photovoltaic barrier (relative to n-Si) with implied open-circuit voltage of ∼300 mV for heterojunction GZO/n-Si. Obtained ρ values were a record low for 400-nm-thick GZO films produced by spray pyrolysis. Finally, GZO films with a thickness of 250 nm and 400 nm and Ga/Zn ratios of 3 at% and 6 at% respectively were applied as a front contact in GZO/(p+nn+)c-Si solar cells. Maximal efficiency of 15.7% was achieved by means of 400-nm-thick film at Ga/Zn = 6 at% from the best combination of passivation and photovoltaic barrier properties and reasonably low ρ and Aeff. [ DOI ]

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