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Laser nanostructuring of the PbX thin films for creation of the semiconductor devices with controlled propertiesстатья
Информация о цитировании статьи получена из
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 28 мая 2015 г.
- Авторы: Arakelian S.M., Bukharov D.N., Emel’yanov V.I., Zimin S.P., Kutrovskay S.V., Kucherik A.O., Makarov A.A., Osipov A.V.
- Журнал: Physics procedia
- Том: 56
- Год издания: 2014
- Издательство: Elsevier
- Местоположение издательства: United States
- Первая страница: 1115
- Последняя страница: 1125
- DOI: 10.1016/j.phpro.2014.08.026
- Аннотация: We have studied a solid-state laser modification of the surface of PbX semiconductor films under processes of self-organization for conditions when photon energies are above the band gap of the semiconductor. Experimental data were used to construct a model for defect deformation instability developing on the surface of epitaxial film through strain-induced drift of laser-induced point defects. The model is capable to describe qualitatively observed surface morphology and to predict the surface profile in laser modification experiments. It has been demonstrated that used approach is applied to analyze ant structure with various morphology which depends on parameters of laser action. By changing the electro-physical properties of the created structures in necessary direction we have a good opportunity to fabricate the new devices for optoelectronics and photonics of different kind
- Добавил в систему: Емельянов Владимир Ильич