Negative and persistent photoconductivity in p-type Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As heterostructures under uniaxial stressстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Illumination of a double p-Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As heterostructure by a red light emitting diode results in a negative photoconductivity that, after the diode is switched off, slowly relaxes to a positive persistent photoconductivity, characterised by an approximately 1.5-fold increase of the two-dimensional hole concentration. This metastable state may be explained with a model in which deep electron traps are supposed to be located above the Fermi level on the inverted heterointerface. Under uniaxial compression the hole concentration in the persistent photoconductivity state, as well as in the dark state, demonstrates the same linear decrease.