Electroluminescence and band structure in p-Al(x)Ga(1-x)As/GaAs(1-y)P(y)/n-Al(x)Ga(1-x)As under uniaxial compressionстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Band structure calculations in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs heterostructure under uni-axial compression in the [110] direction indicates an increase in the optical energy gap with dEph/dP approximate to 85 meV/GPa, a decrease in the quantum well barriers and light hole-heavy hole crossover at uniaxial stress P approximate to 450-500 MPa. The observed increase in electroluminescence intensity and photon energy shift under uni-axial compression are explained by numerical calculation data.