Sputtering of copper-crystals by soluble and nonsoluble ionsстатья

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Дата последнего поиска статьи во внешних источниках: 31 октября 2014 г.

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[1] Sputtering of copper-crystals by soluble and nonsoluble ions / L. Sarholtkristensen, A. Johansen, E. Johnson et al. // Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. — 1991. — Vol. 59. — P. 85–88. Single crystals of copper have been implanted along the <111> direction with 100 keV tin ions and 150 keV lead ions to fluences from 6 x 10(20) to 2 x 10(22) m-2. Angular distributions and total amounts of sputtered atoms have been determined by collecting the sputtered material on hemicylindrical aluminum strips. Furthermore, the total sputter yields have been measured by the weight-loss method. In the case of implantations with tin ions, the total sputter yield of copper atoms and the partial sputter yield of tin atoms agree with the saturation concentration of tin measured by RBS analysis. This is also true for low-fluence implantations of lead, but at higher fluences the sputter yields of lead and copper are conflicting with the near-surface concentration of lead. This may partly be ascribed to changes in the shape of the RBS spectra associated with the onset of severe surface topography starting at fluences around 5 x 10(21) m-2. [ DOI ]

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