Sputtering of copper-crystals by soluble and nonsoluble ionsстатья

Статья опубликована в высокорейтинговом журнале

Информация о цитировании статьи получена из Scopus, Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 31 октября 2014 г.

Работа с статьей

[1] Sputtering of copper-crystals by soluble and nonsoluble ions / L. Sarholtkristensen, A. Johansen, E. Johnson et al. // Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. — 1991. — Vol. 59. — P. 85–88. Single crystals of copper have been implanted along the <111> direction with 100 keV tin ions and 150 keV lead ions to fluences from 6 x 10(20) to 2 x 10(22) m-2. Angular distributions and total amounts of sputtered atoms have been determined by collecting the sputtered material on hemicylindrical aluminum strips. Furthermore, the total sputter yields have been measured by the weight-loss method. In the case of implantations with tin ions, the total sputter yield of copper atoms and the partial sputter yield of tin atoms agree with the saturation concentration of tin measured by RBS analysis. This is also true for low-fluence implantations of lead, but at higher fluences the sputter yields of lead and copper are conflicting with the near-surface concentration of lead. This may partly be ascribed to changes in the shape of the RBS spectra associated with the onset of severe surface topography starting at fluences around 5 x 10(21) m-2. [ DOI ]

Публикация в формате сохранить в файл сохранить в файл сохранить в файл сохранить в файл сохранить в файл сохранить в файл скрыть