Аннотация:Passively Q-switched Er,Yb:GdAB laser with MBE-grown Cr:ZnS thin film
saturable absorber was demonstrated for the first time to our knowledge. Optimization of the Cr2+ concentration and film thickness will result in better laser performance. Moreover, important technological aspect is that MBE growth le absorber film directly onto the active crystal, thus demonstrating approach to fully integrated microchip laser emitting in the 1.5-1.6 µm spectral region.