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Noise properties of SET transistor made from highly doped SOIтезисы доклада
- Авторы: Presnov D.E., Amitonov S.V., Rudakov V.I., Lotkhov S.V., Zorin A.B., Krupenin V.A.
- Сборник: Intenational Conference "Micro- and Nanoelectronics - 2014", ICMNE 2014, October 6-10, “Ershovo” resort, Moscow - Zvenigorod, Russia, Book of Abstracts,
- Тезисы
- Год издания: 2014
- Место издания: Institute of Physics and Technology of the RAS,
- Первая страница: O1-23
- Аннотация: The single electron tunneling (SET) transistor without conventional tunnel barrier junctions was fabricated from preliminary prepared highly doped silicon on insulator (SOI) film and characterized at temperatures down to 15 mK. Background charge fluctuations turned out to be on the level typical for Al SET transistors fabricated on Si substrate, but substantially lower than those measured in our first SOI-SET samples.
- Добавил в систему: Преснов Денис Евгеньевич