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The analysis of the etch pits parameters in the (2 ̅01) plane of the β-Ga2O3 substrate crystalsстатья
Статья опубликована в журнале из списка RSCI Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus- Авторы: Zarichny A.A., Butenko P.N., Boiko M.E., Sharkov M.D., Nikolaev V.I.
- Журнал: Materials Physics and Mechanics
- Том: 2023
- Номер: 51
- Год издания: 2023
- Издательство: Федеральное государственное бюджетное учреждение науки Институт проблем машиноведения Российской академии наук
- Местоположение издательства: Санкт-Петербург
- Первая страница: 46
- Последняя страница: 51
- DOI: 10.18149/MPM.5132023_6
- Аннотация: Selective wet etching technique was applied to commercial (-201) β-Ga2O3 single crystal substrates. Some etching recipes allowed us to reveal sharp etch pits on the surface of the substrates. The geometric shape, orientation and density of etch pits were investigated in as-delivered specimens. An observation of mutual location of the etch pits indicates the likely formation low-angle grain boundaries that can form upon heating. Selective wet etching technique was applied to commercial (-201) β-Ga2O3 single crystal substrates. Some etching recipes allowed us to reveal sharp etch pits on the surface of the substrates. The geometric shape, orientation and density of etch pits were investigated in as-delivered specimens. An observation of mutual location of the etch pits indicates the likely formation low-angle grain boundaries that can form upon heating.
- Добавил в систему: Бойко Михаил Евгеньевич