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Effect of Si+ ion implantation in α-Ga2O3 films on their gas sensitivityстатья
Статья опубликована в высокорейтинговом журнале
Статья опубликована в журнале из списка Web of Science и/или Scopus- Авторы: Yakovlev N., Almaev A., Butenko P., Tetelbaum D., Mikhaylov A., Nikolskaya A., Pechnikov A., Stepanov S., Boiko M., Chikiryaka A., Nikolaev V.
- Журнал: IEEE Sensors Journal
- Том: 23
- Номер: 3
- Год издания: 2023
- Издательство: Institute of Electrical and Electronics Engineers
- Местоположение издательства: Piscataway, NJ, United States
- DOI: 10.1109/JSEN.2022.3229707
- Аннотация: The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) α -Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiation with a dose of 8×1012 – 8×1015 cm −2 at an energy of 100 keV followed by postimplantation annealing increases the response of α -Ga2O3 films to 3 vol% of H2 by 43 times at 400 °C, reduces the response time by a factor of 6, and expands the operating temperature range down to 30 °C. In addition, α -Ga2O3 layers irradiated with a Si+ ion dose of 8×1013 – 8×1015 cm −2 demonstrate high sensitivity to CO and NH3 gases. The mechanism of Si+ ion irradiation effect on the gas-sensing properties of α -Ga2O3 structures is proposed.Index α -Ga2O3, gas sensitivity, halide vapor phase epitaxy (HVPE), ion implantation
- Добавил в систему: Бойко Михаил Евгеньевич