Heat Transfer and Behavior of Silicon Carbide in Subsonic Nitrogen and Carbon Dioxide Plasma Flows under Additional Radiative Heatingстатья
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Дата последнего поиска статьи во внешних источниках: 10 апреля 2024 г.
Аннотация:The effects of subsonic plasma flows of carbon dioxide and pure nitrogen combined with additional laser irradiation on silicon carbide material were investigated. Silicon carbide samples were exposed to temperatures from 1480 to 1620°C (in the carbon dioxide plasma flow) and from 1600 to 1960°C (in the pure nitrogen plasma flow) at a constant pressure in the test chamber of 1 × 104 Pa and gas mass flow rate of 2.4 g/s. Significant differences in the heat transfer and behavior of the samples were observed depending on the plasma composition. The microstructure and surface profiles of the samples before and after different exposures were compared. Surface peculiarities were detected in the areas where the maximum laser irradiation intensity was applied.