Аннотация:Modern tendencies in microelectronics demand creation of qualitative films ofnanometer thickness, requirements to uniformity and smoothness of a surface of receivedstructures constantly rise. The ZnO: N and ZnO: P thin films samples series have beenproduced by the pulse laser deposition method from ceramic targets. Zn3N2, MgO and Zn3P2were entered in the ZnO ceramic targets for the p-type ZnO films fabrication. As buffer gaswere used O2 and N2O. The thermal annealing of the ZnO films have been lead. Theresistance and the ZnO films photoluminescence spectra before and after annealing have beenmeasured. The dependence of the amplitude and the ZnO films photoluminescence peakposition before and after annealing from the N and P films doping level has been established