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Features of Metal Dielectric Structures Based on GaP with Avalanche Multiplication Effectстатья
Информация о цитировании статьи получена из
Scopus
Дата последнего поиска статьи во внешних источниках: 10 апреля 2024 г.
- Авторы: Rud Vasily, Melebaev Doulbay, Trapeznikova Irina, Diuldin Maksim, Yakusheva Maria, Bykova Natalia
- Сборник: 2022 International Conference on Electrical Engineering and Photonics (EExPolytech)
- Год издания: 2022
- Место издания: IEEE
- Первая страница: 379
- Последняя страница: 382
- DOI: 10.1109/eexpolytech56308.2022.9950796
- Аннотация: In recent years, a lot of attention has been paid around the world to the development of nanotechnology and the creation of solid-state nanostructures. Nanotechnology deals with a variety of structures of matter, the characteristic sizes of which are from 1 to 100 nanometers. If, when the volume of any substance decreases in one, two or three coordinates to nanometer-scale sizes, a new quality arises, or this quality arises in a composition of such objects, then these formations should be attributed to nanomaterials, and the technologies for their production and further work with them - to nanotechnologies. In the field of physics of Schottky barriers, metal-semiconductor, nanotechnologies, in particular pontification, are used to create highly efficient photodetectors of visible and ultraviolet radiation and also in laser rangefinders and fiber communication lines [1]–[8]. New applications include positron emission tomography and particle physics. Currently, commercial samples of avalanche photodiode arrays are already appearing.
- Добавил в систему: Рудь Василий Юрьевич