Аннотация:.A comparative analysis of the mass volume crystallization kinetics of AsSe1.5 Bi x ( x = 0, 0.01 and 0.05) glasses in the temperature range of 210-2600C has been performed based on density measurements using the generalized Kolmogorov-Avrami equation, XRD and DTA results. The kinetics of surface crystallization of As2Se3 glass with 0.4 at.% Bi at 270 and 3100C, the parameters of specific electrical conductivity and microhardness of quenched semiconductor silicas at different stages of heat treatment were investigated.