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Effect of Indium Additives on the Kinetics and Mechanism of Isothermal Bulk Crystallization of As2Se3статья
- Автор: Shkol`nikov E.V.
- Журнал: Glass Physics and Chemistry
- Том: 48
- Номер: 2
- Год издания: 2022
- Издательство: Maik Nauka/Interperiodica Publishing
- Местоположение издательства: Russian Federation
- Первая страница: 100
- Последняя страница: 110
- DOI: 10.1134/S1087659622020080
- Аннотация: The analysis of the kinetics of stepwise bulk crystallization of AsSe1.5In0.01 glasses at temperatures of 200, 220, 240, and 260°C and AsSe1.5In0.025 at 240°C has been carried out using the data of density measurements of quenched materials with the use of the generalized Kolmogorov-Avrami equation, the results of differential thermal and quantitative X-ray phase analysis, and microscopic observations. A significant acceleration of volumetric heterogeneous nucleation of plate-like crystals of the main phase As2Se3 by the primary microphase In2Se3, isolated uniformly throughout the volume of monolithic glass at isothermal crystallization in the range of 200-260°C, has been established. The parameters of specific electrical conductivity and microhardness of quenched semiconductor silals at different stages of heat treatment have been investigated
- Добавил в систему: Школьников Евгений Васильевич