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Thin Ge films formed by magnetron sputtering deposition and implanted with Cu+ ionsстатья
Информация о цитировании статьи получена из
Scopus
Дата последнего поиска статьи во внешних источниках: 20 июня 2024 г.
- Авторы: Klimovich I.M., Stepanov A.L.
- Журнал: Letters on materials
- Том: 13
- Номер: 3
- Год издания: 2023
- Первая страница: 243
- Последняя страница: 248
- Аннотация: Thin amorphous Ge films with a thickness of ≈60 nm were deposited on silica substrates by high-power impulse magnetron sputtering in Ar atmosphere. The obtained Ge films were implanted with Cu+ ions at an energy of 40 keV, a current density of 5 μA/cm2 with doses of 6.2·1015 and 3.1·1016 ion/cm2. The surface morphology of the deposited films and their transverse structure were studied by scanning electron and atomic force microscopy, as well as optical reflectance spectroscopy. It was shown that at a low dose, Cu nanoparticles are formed in the irradiated amorphous Ge layer, while an increase in the dose leads to the formation of a nanoporous Ge layer without metal nanoparticles. The work demonstrates that magnetron sputtering deposition offers good potential for nanoporous Ge-based films for energetic applications in the near future.
- Добавил в систему: Степанов Андрей Львович