Simulation of ion transmission and sputtering for hcp and fcc cobalt crystalsстатья
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Дата последнего поиска статьи во внешних источниках: 29 сентября 2021 г.
Аннотация:A molecular dynamics computer simulation model is used to calculate transmission of ions through thin α- and β-Co single-crystal foils and sputtering of α- and β-Co single crystals under 0.2–10 keV Ar+ ion bombardment. Normal ion incidence onto the (0001) α-Co (hcp structure) and (111) β-Co (fcc structure) faces is treated. Calculated dependences of sputtering and ion transmission yields vs ion energy, spatial distributions of transmitted ions and energy distributions of sputtered atoms and transmitted ions are discussed. It is found that all investigated characteristics of transmission of ions and sputtering vary drastically under the α→β polymorphous transition in Co for certain ion bombardment conditions.