Contribution from the Electronic States at Interfaces to Terahertz Photoconductivity in Structures Based on Hg1 – xCdxTe with an Inverted Energy Spectrumстатья
Статья опубликована в журнале из списка Web of Science и/или Scopus
Аннотация:An experimental study is performed of the differences between the electronic states necessarily formed at the boundaries of a topological phase in a vacuum and a trivial buffer in the regions of heterojunction in topological materials based on Hg1 – xCdxTe epitaxial films. It is shown that the PT-symmetric terahertz photoconductivity observed in the specified structures is due precisely to states in the region of topological film/trivial buffer (or cap layer) interfaces.
