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Electrical properties of nanocrystalline n-SnO2 to single crystal p-Si interfaces under gas adsorption conditionsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 19 июля 2013 г.
- Авторы: Vasiliev R.B., Ryabova L.I., Rumyantseva M.N., Gaskov A.M., Akimov B.A.
- Журнал: Physica status solidi (A): Applied research
- Том: 188
- Номер: 3
- Год издания: 2001
- Издательство: Academic Press
- Местоположение издательства: United States
- Первая страница: 1093
- Последняя страница: 1104
- DOI: 10.1002/1521-396X(200112)188:3<1093::AID-PSSA1093>3.0.CO;2-X
- Аннотация: We present a study of heterostructures based on thin n-SnO2 layers prepared by means of an aerosol pyrolysis on a single crystalline p-Si substrate. SnO2 films are composed of 6-8 nm grains segregated into agglomerates of about 0.1 mum providing a porous structure of the film. Currentvoltage (I-V) characteristics are taken in the temperature interval 180-300 K. Capacitance - voltage (C-V) curves are obtained at frequencies of the reference signal varied within 0.5-20 kHz at 300 K. Electrical properties of the structures were examined in air and in gas mixtures N-2 + 0-1 % NO2 and N-2 + 1% C2H5OH. A pronounced non-linearity of the I-V curves is explained in terms of the Schottky equation with high ideality factors beta approximate to 7 - 11. The gas sensitivity S depends on the kind of adsorbed gas molecule due to & Schottky barrier variation together with the interface states density change. The SnO2 doping with Ni induces an increase of S by an order of magnitude.
- Добавил в систему: Васильев Роман Борисович