Bifacial concentrator Ag-free crystalline n-type Si solar cellстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 9 июня 2015 г.
Аннотация:We report results obtained using an innovative approach for the fabrication of bifacial low-concentrator thin Ag-free n-type Cz-Si (Czochralski silicon) solar cells based on an indium tin oxide/(p+nn+)Cz-Si/indium fluorine oxide structure. The (p+nn+)Cz-Si structure was produced by boron and phosphorus diffusion from B- and P-containing glasses deposited on the opposite sides of n-type Cz-Si wafers, followed by an etch-back step. Transparent conducting oxide (TCO) films, acting as antireflection electrodes, were deposited by ultrasonic spray pyrolysis on both sides. A copper wire contact pattern was attached by low-temperature (160°C) lamination simultaneously to the front and rear transparent conducting oxide layers as well as to the interconnecting ribbons located outside the structure. The shadowing from the contacts was ~4%. The resulting solar cells, 25 × 25mm2 in dimensions, showed front/rear efficiencies of 17.6–17.9%/16.7–17.0%, respectively,at one to three suns (bifaciality of ~95%). Even at one-sun front illumination and 20–50% one-sun rear illumination, such a cell will generate energy approaching that produced by a monofacial solar cell of 21–26% efficiency.