Selective deposition of carbon nanowalls and investigation of their emission properties

Авторы: Evlashin S., Borisov V., Pilevskii A., Stepanov A., Suetin N., Rakhimov A.
Сборник: 2011 24th International Vacuum Nanoelectronics Conference (IVNC 2011)
Серия: IEEE Conference Publications
Год издания: 2011
Издательство: Institute of Electrical and Electronics Engineers
Местоположение издательства: Piscataway, NJ, United States
Первая страница: 129
Последняя страница: 130
Аннотация: In this work we discuss emission characteristics of carbon nanowalls on porous silicon. The samples used were n-type Si 4, 5 Ω cm and p-type Si 3 Ω cm. Surface modifications were made using photoelectrochemical methods. After that, the carbon nanowalls were grown on the substrates using a PECVD method after which the emission characteristics were measured. The carbon nanostructures on porous silicon were grown without additional treatment. These samples show a low emission threshold and a good current density. Different etching regimes were studied. The maximum current density was more than 6 A/cm 2
Добавил в систему: Евлашин Станислав Александрович

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