Indium Oxide Based TCO/Silicon: Junction Propertiesстатья

Дата последнего поиска статьи во внешних источниках: 28 мая 2015 г.

Работа с статьей

[1] Indium oxide based tco/silicon: Junction properties / G. G. Untila, T. N. Kost, A. B. Chebotareva et al. // Proceedings 21th European Photovoltaic Solar Energy Conference. — WIP Munich Munich, 2006. — P. 1199–1202. The ability of Indium Tin Oxide (ITO) and Indium Fluorine Oxide (IFO) thin films deposited by pyro-sol method to form rectifying or ohmic contact to n- and p-type silicon have been investigated, studying the depend-ence of open-circuit voltage UOC of TCO/Si junction on the most important deposition parameters: substrate tempera-ture and carrier gas composition (Ar+O2). ITO/(pp+)Si, ITO/(nn+)Si, IFO/(pp+)Si and IFO/(nn+)Si heterostructures were produced. The open circuit voltage UOC of these structures strongly depended on the deposition temperature T and carrier gas composition (Ar+O2). IFO_500 film deposited at high temperature ∼500oC in Ar+O2(2%) revealed rectifying junction on p-Si with UOC[IFO/(pp+)Si] ∼590 mV and nearly ohmic contact to n-Si with UOC[IFO/(nn+)Si]∼3 mV. Decreasing T down to 440oC resulted in degradation of both rectifying/ohmic properties, giving UOC[IFO/(pp+)Si]∼300 mV (film IFO_300). Conversely, ITO deposited at low temperatures ∼400oC in O2 me-dia formed rectifying junction with n-Si (UOC[ITO/(nn+)Si]∼560 mV) and nearly ohmic contact with p-Si (UOC[ITO/(pp+)Si]∼10 mV). Raising T degraded ITO/Si junction rectifying/ohmic properties. QSS-UOC method re-vealed that IFO_300 film passivates shallow n+ emitter (150 Ω/sq) with great loss in fill factor (-6.6%) as compared with negligible loss for IFO_500 film (-0.4%). It is concluded that IFO_500 better deactivates pinholes in emitter. So-lar cells having ITO/(nn+)Si/IFO and IFO/(pp+)Si/ITO structures were processed with efficiencies more than 14%.

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