Charging of submicron structures during silicon dioxide etching in one- and two-frequency gas dischargesстатья

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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.

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[1] Charging of submicron structures during silicon dioxide etching in one- and two-frequency gas discharges / A. P. Palov, Y. A. Mankelevich, T. V. Rakhimova, D. Shamiryan // Plasma Physics Reports. — 2010. — Vol. 36, no. 10. — P. 891–901. A model that combines the Monte Carlo method for calculating electron and ion trajectories in three-dimensional geometry and an analytic approach developed for calculating an electric field in two-dimensional geometry is used to simulate the charging of the surface of periodic submicron SiO(2) structures by electron and ion fluxes in the plasma of a one- and a two-frequency capacitive RF discharge. The energy distribution function of the electrons and ions that come to the bottom of a submicron structure in an argon and an argon-containing plasma is calculated for structures with a width of 11-45 nm and an aspect ratio of d/w = 1-10 (where d and w are the depth and width of the structure). It is shown that secondary electronelectron emission plays an important role in the redistribution of the electric charge and, accordingly, of the electric potential in a submicron structure. It is demonstrated that, when the secondary electron-electron emission mechanism is taken into account, the ion energy spectrum at the bottom of a submicron structure is shifted toward lower energies and becomes broader in comparison with the spectrum of an ion flux from an RF discharge plasma. Moreover, the shift and broadening depend only on the secondary electron-electron emission coefficient, the energy of the charged particles, and the aspect ratio. [ DOI ]

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