Аннотация:Sputtering of mosaic copper-graphite targets in planar DC magnetron was investigated at argon discharge power density up to 100 W/cm2. The deepening rates of copper and graphite surfaces in the sputtered track were measured. The structure and composition of the sputtered target surface layer were investigated. In the beginning the deepening rates differed appreciably resulting in the graphite-copper surface level difference. If the power density exceeded the definite value, the rates were equalized in subsequent stage and the rate of 10E-1 mcm/s was settled. At certain conditions this allowed to get a deposited film composition which was strongly specified by the ratio of surface areas of the target materials. The obtained plasma species data and the target surface analysis results showed that the Cu and Ar ions penetrate into the graphite mosaic and form impurity layer. A mechanism was proposed that describes equalization of the sputtering rates of mosaic target materials having the sputtering yields differed initially by the order of magnitude. The mechanism takes into account the mosaic depth difference appearance at the initial stage of sputtering, the redistribution of ion flux to the deeper and higher mosaic elements, as well as the sputtered atoms transfer and penetration into the mosaic elements of the another kind, which lead to known sputtering yield amplification effect in the case.