Long-Term Operational Stability of Ta/Pt Thin-Film Microheaters: Impact of the Ta Adhesion Layer

Авторы: Kalinin Ivan A., Roslyakov Ilya V., Khmelenin Dmitry N., Napolskii Kirill S.
Журнал: Nanomaterials
Том: 13
Номер: 1
Год издания: 2023
Издательство: MDPI
Местоположение издательства: Basel, Switzerland
Первая страница: 94
DOI: 10.3390/nano13010094
Аннотация: Microheaters with long-term stability are crucial for the development of a variety of microelectronic devices operated at high temperatures. Structured Ta/Pt bilayers, in which the Ta sublayer ensures high adhesion of the Pt resistive layer, are widely used to create microheaters. Herein, a comprehensive study of the microstructure of Ta/Pt films using high-resolution transmission electron microscopy with local elemental analysis reveals the twofold nature of Ta after annealing. The main fraction of Ta persists in the form of tantalum oxide between the Pt resistive layer and the alumina substrate. Such a sublayer hampers Pt recrystallization and grain growth in bilayered Ta/Pt films in comparison with pure Pt films. Tantalum is also observed inside the Pt grains as individual Ta nanoparticles, but their volume fraction is only about 2%. Microheaters based on the 10 nm Ta/90 nm Pt bilayers after pre-annealing exhibit long-term stability with low resistance drift at 500 °C (less than 3%/month).
Добавил в систему: Калинин Иван Александрович

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