Boundary conditions for the formation of a ferromagnetic phase during the deposition of Ti1-xCoxO2-delta thin filmsстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The conditions and the mechanism of the formation of a ferromagnetic phase in a Ti1-xCoxO2-delta oxide semiconductor are studied. It is found that the ferromagnetism manifests itself at room temperature in the films of Co-doped TiO2-delta oxide deposited on SrTiO3 (100) substrates only within a limited range of charge carrier densities: 2 x 10(18) -3 x 10(22) cm(-3). The minimum concentration of charge carriers corresponding to the formation of the ferromagnetic phase increases with a decrease in the cobalt content in the material under study. The ferromagnetism in Ti1-xCoxO2-delta thin films can be attributed to Co-enriched clusters with above critical sizes. (C)2005 Pleiades Publishing, Inc.