|
ИСТИНА |
Войти в систему Регистрация |
Интеллектуальная Система Тематического Исследования НАукометрических данных |
||
Recrystallization of Si Nanoparticles in Presence of Chalcogens: Improved Electrical and Optical Propertiesстатья
Статья опубликована в высокорейтинговом журнале
Статья опубликована в журнале из списка Web of Science и/или Scopus- Авторы: Vinokurov A.A., Popelensky V.M., Bubenov S.S., Kononov N.N., Cherednichenko K.A., Kuznetsova T.A., Dorofeev S.G.
- Журнал: Materials
- Том: 15
- Номер: 24
- Год издания: 2022
- Издательство: MDPI
- Местоположение издательства: Basel, Switzerland
- Номер статьи: 8842
- DOI: 10.3390/ma15248842
- Аннотация: Nanocrystals of Si doped with S, Se and Te were synthesized by annealing them in chalcogen vapors in a vacuum at a high temperature range from 800 to 850 °C. The influence of the dopant on the structure and morphology of the particles and their optical and electrical properties was studied. In the case of all three chalcogens, the recrystallization of Si was observed, and XRD peaks characteristic of noncubic Si phases were found by means of electronic diffraction for Si doped with S and Se. Moreover, in presence of S and Te, crystalline rods with six-sided and four-sided cross-sections, respectively, were formed, their length reaching hundreds of μm. Samples with sulfur and selenium showed high conductivity compared to the undoped material.
- Добавил в систему: Попеленский Вадим Михайлович