Diffusion-deformational instability and subboundary formation in the recrystallization of semiconductor filmson-insulatorстатья
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Дата последнего поиска статьи во внешних источниках: 7 декабря 2013 г.
Аннотация:A novel (defect-deformational) mechanism for subboundary formation in laser beam recrystallization of semiconductor films is proposed. The theory is developed yielding explicit analytical expressions for the distance between subboundaries as a function of film thickness and the scanning velocity of the laser beam. The theoretical results obtained agree well with the experimental results