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Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substratesстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Дата последнего поиска статьи во внешних источниках: 3 мая 2017 г.
- Авторы: Galiev G.B., Grekhov M.M., Kitaeva G.Kh, Klimov E.A., Klochkov A.N., Kolentsova O.S., Kornienko V.V., Kuznetsov K.A., Maltsev P.P., Pushkarev S.S.
- Журнал: Semiconductors издательство Springer
- Том: 51
- Номер: 3
- Год издания: 2017
- Первая страница: 310
- Последняя страница: 317
- DOI: 10.1134/S1063782617030071
- Аннотация: Abstract—The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In0.53Ga0.47As epitaxial films under femtosecond laser pumping are investigated by terahertz timeresolved spectroscopy. The In0.53Ga0.47As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.
- Добавил в систему: Кузнецов Кирилл Андреевич