Mechanism of the Formation and Evolution of Periodic Surface Relief Nanostructures under the Scanning Laser-Induced Inelastic Photodeformation of Semiconductorsстатья
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Дата последнего поиска статьи во внешних источниках: 29 ноября 2013 г.
Аннотация:A defect-deformational (DD) mechanism is proposed for the self-organization of laser-induced
point defects (vacancies and interstitials) under low-threshold (far from the melting point) local (10–100μm)
light-induced heating with the scanning periodic pulsed laser irradiation of a semiconductor resulting in an
inelastic deformation of micron-sized regions of Ge. A linear theory of DD instability is developed within the
model of a biaxially stressed defective film. This model describes the main experimental data on the formation
of two- and one-dimensional periodic nanostructures on a semiconductor surface relief