Passivation of boron-doped p+-Si emitters in the (p+nn+)Si solar cell structure with AlOx grown by ultrasonic spray pyrolysisстатья

Статья опубликована в высокорейтинговом журнале

Информация о цитировании статьи получена из Scopus, Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 13 марта 2014 г.

Работа с статьей

[1] Passivation of boron-doped p+-si emitters in the (p+nn+)si solar cell structure with alox grown by ultrasonic spray pyrolysis / G. G. Untila, T. N. Kost, A. B. Chebotareva et al. // Solar Energy. — 2013. — Vol. 98. — P. 440–447. AlOx/(p+nn+)Cz–Si/IFO and ITO/AlOx/(p+nn+)Cz–Si/IFO solar cell structures have been fabricated from n-type Czochralski (Cz) silicon wafers through boron and phosphorus diffusion for producing the p+-Si emitter and n+-Si layer, respectively. The In2O3:F (IFO), AlOx, and In2O3:Sn (ITO) films have been grown by ultrasonic spray pyrolysis at 475 C, 330 C, and 375 C, respectively. The AlOx film thickness was varied in the range 27–108 nm, the annealing time at 330 C in an Ar + 5% O2 atmosphere containing vapor of a 2M H2O solution in methanol – in the range 0–18 min, and the sheet resistance of the p+-Si emitter – in the range 28–133 X/h (varied through layer-by-layer chemical etching). We have studied the internal quantum efficiency (IQE) spectrum, photocurrent JIQE of the structures (evaluated from the IQE spectrum), as well as their photovoltage and pseudo-fill factor evaluated from Suns–Voc measurements. The results demonstrate that the level of p+-Si surface passivation increases with increasing AlOx film thickness and as a result of annealing. The optimal sheet resistance of the emitter is 65 X/h. The pseudo-efficiency of the optimized ITO/AlOx/ (p+nn+)Cz–Si/IFO structures was 20.2% under front illumination. [ DOI ]

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