Аннотация:The conditions for the synthesis of silicon carbide nanoparticles in a SiH4/C2H2/Ar/He gas mixtureusing 10.6 μm CO2 laser radiation are determined. The laser synthesis of SiC samples observed withSiH4/C2H2 gas flow rate in the range of 1.6–3.2. The temperature in the reaction area was about 1400–1500°C. Silicon carbide nanoparticles ~6 nm diameter were obtained and their composition was studied.