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Temperature Dependence of the Voltage Induced by Spin Current in a Manganite–Iridate Heterostructureстатья
- Авторы: Shaikhulov T.A., Stankevich K.L., Constantinian K.Y., Demidov V.V., Ovsyannikov G.A.
- Журнал: Physics of the Solid State
- Том: 63
- Номер: 10
- Год издания: 2021
- Издательство: Pleiades Publishing, Ltd
- Местоположение издательства: Road Town, United Kingdom
- Первая страница: 1532
- Последняя страница: 1535
- DOI: 10.1134/s1063783421090353
- Аннотация: The temperature dependence of the voltage induced by spin current is studied in the epitaxial thin-film La0.7Sr0.3MnO3/SrIrO3 heterostructure deposited on a single-crystal NdGaO3 substrate. The spin cur-rent is generated during microwave pumping in conditions of the ferromagnetic resonance in aLa0.7Sr0.3MnO3 ferromagnetic film and is registered in a SrIrO3 film due to the inverse spin Hall effect. Thespin current spectrum half-width increases significantly and the spin current amplitude increases on coolingfrom room temperature (300 K) to 135 K.
- Добавил в систему: Станкевич Константин Леонидович