Electronic structure of chromium-doped lead telluride-based diluted magnetic semiconductorsстатья

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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.

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[1] Electronic structure of chromium-doped lead telluride-based diluted magnetic semiconductors / E. P. Skipetrov, N. A. Pichugin, E. I. Slyn'ko, V. E. Slyn'ko // Low Temperature Physics. — 2011. — Vol. 37, no. 3. — P. 210–219. The crystal structure, composition, galvanomagnetic, and oscillatory properties of Pb(1-x-y)Sn(x)Cr(y)Te (x=0, 0.05-0.30; y <= 0.01) alloys are studied for different matrices and chromium impurity concentrations. It is shown that impurity chromium ions dissolve in the lattice in amounts below 1 mol.%, while higher chromium concentrations lead to the appearance of microscopic regions with elevated chromium contents and inclusions of chromium-tellurium compounds. Reductions in the hole concentration, p-n conversion of the conductivity type, and stabilization of the Fermi level by the resonance level of chromium are observed with increasing chromium content. The initial rates of change of the charge carrier concentrations during doping are determined. A two-band Kane dispersion relation is used to calculate the electron concentration and Fermi level as functions of the tin content. A diagram showing the rearrangement of the electronic structure of the chromium doped alloys with varying matrix composition is constructed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3573664]. [ DOI ]

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