Doping of nanocrystalline silicon with sulfur by gas-phase diffusionстатьяИсследовательская статья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 22 июня 2022 г.
Аннотация:Sulfur-doped silicon nanoparticles were synthesized by annealing of nanosilicon powder in sulfur vapors at 500, 700 and 900°C. The structures, chemical composition, optical and electrical properties of the samples were characterized using transmission electron microscopy, scanning electron microscopy, total x-ray fluorescence, x-ray diffraction, electron diffraction and absorption spectroscopy. The highest sulfur concentration was achieved at 700°C with most of the dopant located on the surface, but it was evenly distributed inside the particles’ cores. Maximum level of doping equals to 0.5% mol of sulfur, which is 4 orders of magnitude higher than the equilibrium solubility at 700°C. Moreover, silicon microwires up to 300 μm long were discovered in samples synthesized at 900°C. These samples also exhibits unusual properties, like direct band gap absorption and good conductivity even after being stored under air for a long time.