Control of NV, SiV and GeV centers formation in single crystal diamond needlesстатья
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Дата последнего поиска статьи во внешних источниках: 20 апреля 2022 г.
Аннотация:Single-crystal diamond needles in the form of micrometer-scale sharp pyramids were produced using a combinationof chemical vapor deposition and thermal oxidation processes. These diamond needles with atomic-sizedfluorescent defects (color centers) attract great interest for practical applications as a platform for creation ofoptical quantum sensing probes and optical quantum communication elements. Particular color centers localizationproviding suitable luminescence characteristics is required for these applications. Here we report aboutformation of nitrogen-vacancy (NV), silicon-vacancy (SiV) and germanium-vacancy (GeV) centers in the singlecrystaldiamond needles during direct current discharge plasma enhanced chemical vapor deposition (PE CVD).Luminescent characteristics of the needles were observed by confocal photoluminescence mapping. Analysis ofexperimental results allows us proposing possible mechanisms of impurities introduction into the crystal latticeduring needles growth. These mechanisms include gas decomposition and etching of substrate material duringCVD. The proposed mechanisms were approved by realization of CVD process protocols resulting in controllableformation of NV, SiV and GeV centers in single-crystal diamond needles including formation of thin NV- and SiVenrichedlayers by tuning deposition process parameters. The proposed experimental approaches in combinationwith revealed mechanisms for introduction of favorable impurities make single-crystal diamond needles promisingcandidates for scanning quantum sensing, quantum communication and hyperpolarization experiments.