Photoreflection studies of the dopant activation in InP implanted with Be(+) ionsстатья

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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.

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[1] Avakyants L. P., Bokov P. Y., Chervyakov A. V. Photoreflection studies of the dopant activation in inp implanted with be(+) ions // Semiconductors. — 2005. — Vol. 39, no. 2. — P. 174–176. Photoreflection spectroscopy is used to study the activation of impurity in InP crystals implanted with 100-keV Be(+) ions at a dose of 1013 cm(-2) and then subjected to thermal annealing for 10 s. After annealing at temperatures no higher than 400oC, lines characteristic of crystalline InP are not observed in the photoreflection spectrum, which indicates that the crystal lattice has become disordered as a result of the ion implantation. If the annealing temperature is in the range from 400 to 700oC, the lines related to the fundamental transition in InP (1.34 eV) and the transition between the conduction band and the subband, which has split off from the valence band owing to a spin-orbit interaction (1.44 eV), are observed in the spectrum, which indicates that the InP crystal structure is restored. The dopant is activated in samples annealed at 800oC, as indicated by the Franz-Keldysh oscillations observed in the corresponding photoreflection spectra. Free-carrier concentration is determined from the oscillation period and is found to be equal to 2.2 × 1016 cm(-3). © 2005 Pleiades Publishing, Inc. [ DOI ]

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