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Re-deposition of ITER-grade Be on plasma gun facility QSPA-Be: Characterization & plasma cleaningстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 26 января 2022 г.
- Авторы: Dmitriev A.M., Razdobarin A.G., Snigirev L.A., Elets D.I., Bukreev I.M., Babinov N.A., Varshavchik L.A., Mukhin E.E., Samsonov D.S., Tolstyakov S.Yu, Chernakov An P., Kovalenko D.V., Pogkovyrov V.L., Yaroshevskaya A.D., Barsuk V.A., Kupriyanov I.B., Bukhovets V.L., Gorodetsky A.E., Markin A.V., Zalavutdinov R.Kh, Arkhipushkin I.A., Krat S.A., Polskij V.I., Gurbich A.F.
- Журнал: NUCLEAR MATERIALS AND ENERGY
- Том: 30
- Год издания: 2022
- Номер статьи: 101111
- DOI: 10.1016/j.nme.2021.101111
- Аннотация: Studies of contaminants obtained by spraying ITER-grade Be on a quasi-stationary plasma gun facility QSPA-Be are presented. Contaminating films, consisting mainly of Be and O in approximately equal proportions, were deposited on substrates of quartz, sapphire, single crystalline silicon (SC-Si) and NaCl crystal. Characterization of the deposits was performed using SEM, XPS, EBS, AFM, SE, TEM&SAED and micro-interferometry showing polycrystalline BeO films similar as found in JET-ILW. Films on SC-Si and NaCl were used to characterize their composition and morphology. The cleaning rates in the 81.36 MHz RF discharges in He or D2 at 2 Pa were measured on the SC-Si target. The measured etching rate of the deposited films was several times higher than the rate calculated from the theoretical value of beryllium oxide sputtering yield. Test cleaning of these contaminants was carried out in a capacitively coupled RF discharge (CCRF) from the surface of sapphire and quartz plates, which were considered as a mock-ups of the protective window of the first mirror unit (FMU) designed for ITER divertor Thomson scattering diagnostic system (DTS).
- Добавил в систему: Буховец Валентин Леонидович