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Software tool for advanced Monte Carlo simulation of electron scattering in EBL and SEM: CHARIOTстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Babin S.V., Borisov S.S., Cheremukhin E.A., Grachev E.A., Korol V., Ocola L.E.
- Сборник: Proceedings of SPIE - The International Society for Optical Engineering
- Год издания: 2003
- Первая страница: 583
- Последняя страница: 590
- DOI: 10.1117/12.504568
- Аннотация: From Conference Volume 5037 Emerging Lithographic Technologies VII Roxann L. Engelstad Santa Clara, CA February 23, 2003 Abstract An advanced Monte Carlo model and software were developed to simulate electron scattering in electron beam lithography and signal formation in scanning electron microscopy at a new level of accuracy required for lithography and metrology. The model involves generation of fast secondary and slow secondary electrons, as well as generation of volume plasmons, and electron transfer between layers with regard to the difference between work functions of layers. To track SEM detector channel, the geometry of a detector and its energy transfer function were taken into account. This advanced model was used to simulate electron trajectories, deposited energy, signal from electron detector and images in SEM. Examples of simulations are presented for electron spectra, energy deposition in 50 kV maskmaking, and signals from patterned wafers in SEM. © (2003) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. Topics Electron beam lithography ; Electrons ; Energy transfer ; Lithography ; Metrology ; Plasmons ; Scanning electron microscopy ; Scattering ; Sensors ; Simulations
- Добавил в систему: Грачев Евгений Александрович