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Crystallographic magnetic,and electrical properties of thin Re0.6Ba0.4MnO3 epitaxial films (Re=La, Pr, Ni, Gd).Gorbenko O.Yu., Deminстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Gorbenko O.Yu, Demin R.V., Kaul A.R., Koroleva L.I., Szymczak R., Szymczak H., Baran M.
- Журнал: Physics of the Solid State
- Том: 46
- Номер: 7
- Год издания: 2004
- Издательство: Pleiades Publishing, Ltd
- Местоположение издательства: Road Town, United Kingdom
- Первая страница: 1255
- Последняя страница: 1261
- Аннотация: Teh Re0.6Ba0.4MnO3 epitaxial films (Re = La, Pr, Nd, Gd) frown on (001) SiTiO3 and (001)ZrO2(Y2O3) single crystal substrates have been prepaed and atudied. All the films were found to have a cubic perovskite structure, with the exception of of the film with Re = La, which revealed rhombohedral distortion of the perovskite cell. The temperature dependences of the electrical resistivity and magnetoresistance pass through a maximum near the Curie point Tc, where the magnetoresistance reaches a colossal value. The magnetization isothers M(T) are superpositions of a magnetization that is linear in field (like that of an antiferromagnet) and a weak spontaneous magnetization. The magnetic moment per formula unit is substantually smaller than that expected under complete ferro- or ferrimagnetic ordering. The magnetization of samples cooled in a magnetic field (FC samples) and with no field applied (ZFC samples) differ by an amount that persists up to the highest measurement fields (59 kOe). The M(T) dependence obtained in strong magnetic fields is close to linear. Hysteresis loops of the FC samples are shifted along the field axis. The above magnetic and electric properties of thin films are explained in terms of two coexisting magnetic phases, which are due to strong s-d exchange coupling.
- Добавил в систему: Королёва Людмила Ивановна