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ISOTHERMAL AND THERMALLY ACTIVATED CURRENTS IN CAGA2S4-EU SINGLE-CRYSTALSстатья
Информация о цитировании статьи получена из
Web of Science
Дата последнего поиска статьи во внешних источниках: 27 мая 2015 г.
- Авторы: Aslanov G.K., Tagiev O.B., Izzatov B.M.
- Журнал: Soviet Physics Semiconductors-Ussr
- Том: 26
- Номер: 4
- Год издания: 1992
- Первая страница: 395
- Последняя страница: 398
- Аннотация: The method of chemical transport reactions was used to grow CaGa2S3:Eu single crystals with an electrical resistivity 10(10) OMEGA.cm and a band gap E(g) = 2.8 eV. Relaxation of the dark current, temperature dependences of the electrical conductivity, and thermally stimulated depolarization currents were investigated in a wide range of temperatures (100-400 K) and electric fields (up to approximately 10(4) V/cm). The experimental results on the relaxation of the dark current were explained by a relay mechanism of transport of a charge injected into a crystal. The values of the "cutoff current" I0 = 8.2 X 10(-11) A, "cutoff charge" Q0 = 1.55 x 10(-9) C, contact capacitance C(k) = 7.75 X 10(-12) F, size of the charge concentration region d(k) = 9.14 X 10(-6) cm, mobility of carriers moving between localized states mu = 3.6 X 10(-4) cm2.V-1.s-1, and trap concentration N(t) = 8.1 X 10(16) cm-3 were determined. A comprehensive investigation yielded the activation energies (E(t1) = 0.2 eV and E(t2) = 0.4 eV) of the trapping centers.
- Добавил в систему: Тагиев Октай Бахадир