Temperature effect on the photoluminescence intensity and Eu2+ excited state lifetime in EuGa2S4 and EuGa2S4:Er3+статья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The photoluminescence (PL) spectra and Eu2+ excited state lifetime of EuGa2S4 and EuGa2S4:Er3+ have been studied in the range 78-500 K. The spectra show a band at 545 nm, due to the 4f (6)5d -> 4f (7)((8) S (7/2)) transition. With increasing temperature, the full width at half maximum I"(T) of the PL band of EuGa2S4 and EuGa2S4:Er3+ crystals increases from 0.15 to 0.22 and from 0.13 to 0.19 eV, respectively. Over the entire temperature range studied, I"(T) is a linear function of T (1/2). The 545-nm emission intensity and Eu2+ excited state lifetime in EuGa2S4 and EuGa2S4:Er3+ vary exponentially with temperature. The luminescence quenching energies evaluated from the Arrhenius plots of I(10(3)/T) and tau(10(3)/T) coincide (0.10 eV) within the error of determination.