Low damage cryogenic etching of porous organosilicate low-k materials using SF6/O2/SiF4статья

Информация о цитировании статьи получена из Scopus, Web of Science
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Дата последнего поиска статьи во внешних источниках: 31 декабря 2013 г.

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[1] Low damage cryogenic etching of porous organosilicate low-k materials using sf6/o2/sif4 / Z. Liping, L. Rami, L. Philippe et al. // ECS Journal of Solid State Science and Technology. — 2013. — Vol. 2, no. 6. — P. N131–N139. Low temperature plasma etching of porous organosilicate low-k films is studied, in an ICP chamber with cryo-cooled substrate holder, using Fluorine-based plasma discharges. It is demonstrated that plasma-induced damage is significantly reduced when the base temperature is below a threshold Tc that depends on pore size of low-k materials. For T < Tc, almost no carbon depletion is observed and the k-value degradation is negligible. It is shown that protection occurs mainly through the condensation of the etch by-products and their ability to seal the open pores against radical diffusion. By addition of SiF4 and O2 into the gas discharge, plasma-induced damage is further reduced, as a result of SiOxFy deposition. Vertical trench profiles are obtained in patterned structures, using an inorganic hard mask. The damage reduction mechanism is discussed and a protection model is proposed. [ DOI ]

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