Large-scale and localized laser crystallization of optically thick amorphous silicon films by near-IR femtosecond pulses

Bronnikov, K.; Dostovalov, A.; Cherepakhin, A.; Mitsai, E.; Nepomniaschiy, A.; Kulinich, S.A.; Zhizhchenko, A.; Kuchmizhak, A.

Статья опубликована в высокорейтинговом журнале

Информация о цитировании статьи получена из Web of Science, Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 20 января 2021 г.

Авторы: Bronnikov K., Dostovalov A., Cherepakhin A., Mitsai E., Nepomniaschiy A., Kulinich S.A., Zhizhchenko A., Kuchmizhak A.
Журнал: Materials
Том: 13
Год издания: 2020
Издательство: MDPI
Местоположение издательства: Basel, Switzerland
Номер статьи: 5296
DOI: 10.3390/ma13225296
Аннотация: Amorphous silicon (a-Si) film present an inexpensive and promising material foroptoelectronic and nanophotonic applications. Its basic optical and optoelectronic properties are known to be improved via phase transition from amorphous to polycrystalline phase. Infrared femtosecond laser radiation can be considered to be a promising nondestructive and facile way to drive uniform in-depth and lateral crystallization of a-Si films that are typically opaque in UV-visible spectral range. However, so far only a few studies reported on use of near-IR radiation for laser-induced crystallization of a-Si providing less information regarding optical properties of the resultant polycrystalline Si films demonstrating rather high surface roughness. The present work demonstrates efficient and gentle single-pass crystallization of a-Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of laser-annealed films by atomic-force microscopy, optical, micro-Raman and energy-dispersive X-ray spectroscopy, as well as numerical modeling of optical spectra, confirmed efficient crystallization of a-Si and high-quality of the obtained films. Moreover, we highlight localized laser-induced crystallization of a-Si as a promising way for optical information encryption, anti-counterfeiting and fabrication of micro-optical elements.
Добавил в систему: Кулинич Сергей Алексеевич

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Large-scale and localized laser crystallization of optically thick amorphous silicon films by near-IR femtosecond pulsesстатья

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