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Stress distribution in highly porous SiO2 films: results of the molecular dynamics simulationстатья
Дата последнего поиска статьи во внешних источниках: 4 августа 2021 г.
- Авторы: Grigoriev Fedor V., Sulimov Vladimir B., Tikhonravov Alexander V.
- Журнал: IOP Conference Series: Materials Science and Engineering
- Том: 904
- Год издания: 2020
- Издательство: -
- Местоположение издательства: Krakow
- Номер статьи: 012004
- Аннотация: The stress distribution over the thickness of silicon dioxide thin films is studied usingsimulated thin film cluster. The atomistic cluster representing the film is deposited on a glassysubstrate using the full-atomistic molecular dynamic simulation. The deposition angle is equal to 80°, which leads to the growth of a highly porous anisotropic film with low refractive index. Themethod for calculating the stress distribution is based on the integral relationship between thethickness-averaged stress and the stress distribution. In the present work, we focus on theapplication of this relationship to the atomistic modeling of stresses at the initial stage of thinfilm growth. It is found that in the transition layer between the substrate and the film the stressdistribution function corresponds to the compressive stress. With the increase in film thickness,the stress distribution function changes sign and becomes tensile. It is shown that these resultscorrespond to experimental data.
- Добавил в систему: Григорьев Федор Васильевич