Study of polycrystalline silicon obtained by aluminum-induced crystallization depending on process conditionsстатья

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Дата последнего поиска статьи во внешних источниках: 13 февраля 2017 г.

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[1] Pereyaslavtsev A., Sokolov I., Sinev L. Study of polycrystalline silicon obtained by aluminum-induced crystallization depending on process conditions // Materials Research Express. — 2016. — Vol. 3, no. 11. — P. 116404. In this paper, we have decided to consider an alternative method of producing polycrystalline silicon and study change of its electrophysical characteristics depending on process parameters. As an alternative low-pressure chemical vapor deposition method appears aluminum-induced crystallization (AIC), which allows to obtain a polycrystalline silicon film is significantly larger grain size, thereby reducing contribution of grain boundaries. A comprehensive study of polycrystalline silicon was carried out using a variety of microscopic (OM, SEM) and spectroscopic (RAMAN, XPS) and diffraction (EBSD, XRD) analytic methods. We also considered possibility of self-doping in AIC, result of which was obtained polycrystalline silicon with different resistance. Additionally considered changes in temperature coefficient of resistance depending on technological parameters of AIC process. [ DOI ]

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