Аннотация:The real and imaginary component, Re j and Im j, of the photocurrent were calculated for a semiconductor electrode illuminated simultaneously by light of constant and periodically varying intensity, under the assumption that the rate constant of surface recombination could depend on light intensity. The results of the calculation were compared with experimental data for an anodically oxidized lead electrode in 1 N H2SO4. Photocurrent diagram in the complex plane could be described by an elliptical arc, which is evidence for a nearly uniform relaxation time distribution in the system. The major kinetic parameters of the photoprocess were determined, and it was shown that charge transfer across the interface can occur, both via surface states and directly from the valence band.