The Effect of Argon Ion Irradiation Parameters on the Photoluminescence Spectrum of Porous Siliconстатья
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Дата последнего поиска статьи во внешних источниках: 20 января 2021 г.
Аннотация:Porous silicon was irradiated Ar+ ions with energies of 100 and 200 keV and fluences from 10^12 cm-2 to 3·10^13 cm-2. The effect of ion irradiation at different fluences and energies of incident particles on the photoluminescence spectrum of porous silicon is studied. It was shown that ion irradiation leads to a shift in the photoluminescence maximum, which increases with increasing energy. An increase in the radiation dose leads to a decrease in the intensity of photoluminescence, without affecting the size of the maximum shift. The main mechanisms of photoluminescence in porous silicon are discussed.