Interband resonant tunneling in superconductor heterostructures in a quantizing magnetic fieldстатья
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Аннотация:The resonant tunneling of electrons through quasistationary levels in the valence band of a quantum well in double-barrier structures based on III–V materials with type-II heterojunctions is considered in a quantizing magnetic field directed perpendicularly to the interfaces. The transmission coefficients of the tunnel structure for transitions from states corresponding to different Landau levels are calculated using the Kane model. It is shown that transitions with a unit change in the Landau level index n as a result of mixing of the wave functions of states with opposite spin orientations are possible on the interfaces due to spin-orbit coupling. The probability of such transitions can be comparable to the probability of transitions without a change in the Landau level index for InAs/AlGaSb/GaSb resonant-tunneling structures.
Статья цитируется в работах
INTERBAND RESONANT MAGNETOTUNNELLING IN SEMICONDUCTOR HETEROSTRUCTURES
Zakharova A.
Journal of Physics: Condensed Matter. 1999. Т. 11. № 24. С. 4675-4688.
INTERBAND RESONANT TUNNELLING IN QUANTIZING MAGNETIC FIELD
Zakharova A.
Solid State Communications. 2000. Т. 113. № 10. С. 599-602
RESONANCE TUNNELING AND SLOW ELECTRON REFLECTION SPECTRA IN LAYERED BITEI AND BITEBR SEMICONDUCTORS
Popik T.Yu., Shpenik O.B., Puga P.P., Popik Yu.V.
Journal of Optoelectronics and Advanced Materials. 2000. Т. 2. № 2. С. 171-176.
Zakharova A.,
Труды Физико-технологического института, издательство Физико-технологический институт РАН (Москва), том 14, с. 68-75
This work was supported by the Russian Foundation of Fundamental Research under grant No 97-02-16438-a