Аннотация:Resonant tunnelling structures (RTS) with type II heterojunctions such as InAs/AlSb/InAs RTS are investigated theoretically utilizing a self-consistent solution for potential shape and carrier density distribution. The tunnelling probability and tunnel current are calculated using the transfer matrix method and Kane's model. Band-bending is obtained, allowing for a realistic structure of spacer and contact regions. The transfer Hamiltonian approach is employed to determine the 2D charge density in the quantum well. As a result, current-voltage (I-V) characteristics are obtained for InAs/AlSb/InAs diodes close to those observed experimentally.